Datasheet DMN3300U Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN3300U	N-CHANNEL FIELD EFFECT TRANSISTOR ( 30V, 2A ) DMN3300U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • Low On-Resistance • 150 mΩ @VGS = 4.5V • 200 mΩ @VGS = 2.5V • 240 mΩ @VGS = 1.8V • 300 mΩ @VGS = 1.5V Ultra Low Gate Threshold Voltage Low Input Capacita	Diodes

DMN33 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN33D8LV	N-CHANNEL ENHANCEMENT MODE MOSFET ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN33D8LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V ID max TA = +25°C 350 mA Description This MOSFET has been designed to minimize the on-state resistance (R	Diodes
DMN33D8L	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PNREOWDUPCRTODUCT Product Summary V(BR)DSS 30V RDS(ON) max 3.0Ω @ VGS = 10V 3.8Ω @ VGS = 5V ID max TA = +25°C 250mA 200mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching per	Diodes
DMN3300U	N-CHANNEL FIELD EFFECT TRANSISTOR ( 30V, 2A ) DMN3300U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • Low On-Resistance • 150 mΩ @VGS = 4.5V • 200 mΩ @VGS = 2.5V • 240 mΩ @VGS = 1.8V • 300 mΩ @VGS = 1.5V Ultra Low Gate Threshold Voltag	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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