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Datasheet DMN30H4D0L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | DMN30H4D0L | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
Product Summary
V(BR)DSS 300V
RDS(ON)
4Ω @ VGS = 10V 4Ω @ VGS = 4.5V
ID TA = +25°C
0.25A
0.25A
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it idea |
 Diodes |
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| 1 | DMN30H4D0LFDE | N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT
DMN30H4D0LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 300V
RDS(ON)
4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V
ID TA = +25°C
0.55A
0.55A
0.44A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet |
Diodes |
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