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Datasheet DMN3033LSN Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | DMN3033LSN | N-CHANNEL ENHANCEMENT MODE MOSFET www.DataSheet.co.kr
DMN3033LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
• • Low Gate Charge Low RDS(ON): • 30 mΩ @VGS = 10V • 40 mΩ @VGS = 4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to |
Diodes |
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1 | DMN3033LSNQ | N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
BVDSS 30V
RDS(on) max
30mΩ @ VGS = 10V 40mΩ @ VGS = 4.5V
ID TA = +25°C
6A
4A
Description and Applications
This new generation small-signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for highefficiency power management applications. |
Diodes |
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