Datasheet DMN2005K Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN2005K	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: DMN2005K DMN2005K NEW PRODUCT NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free	Diodes Incorporated

DMN20 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN2005UPS	N-CHANNEL ENHANCEMENT MODE MOSFET A D VNAEN CWEPDRIONDFUOCRTM A T I O N DMN2005UPS Green 20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary Features V(BR)DSS 20V RDS(ON) 4.6mΩ @ VGS = 4.5V 8.7mΩ @ VGS = 2.5V ID TC = +25°C 100A 80A Description This new generation P-Channel Enhancement Mode	Diodes
DMN2027USS	N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVNAENWCEP IRNOFDOURCTMATION DMN2027USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 12.5mΩ @ VGS= 4.5V 19mΩ @ VGS= 2.5V ID max TA = +25°C 10.5 A 8.5 A Description and Applications This MOSFET is designed to minimize the o	Diodes
DMN2004DMK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Moun	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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