DataSheet.es    


Datasheet DIM100WHS17-A000 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1DIM100WHS17-A000IGBT Power Module

DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.1 Febuary 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 100A 200A *(measured a
Dynex Semiconductor
Dynex Semiconductor		igbt


DIM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1DIM100SIMM/DIMM SOCKET

DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com DIM100
AUK Contractors
AUK Contractors		data
2DIM100PHM33-A000IGBT Power Module

DIM100PHM33-A000 DIM100PHM33-A000 Half Bridge IGBT Module PDS5708-1.3 January 2004 FEATURES I I I I KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 3.4V 100A 200A 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolate
Dynex Semiconductor
Dynex Semiconductor		igbt
3DIM100PHM33-F000IGBT Power Module

DIM100PHM33-F000 DIM100PHM33-F000 Half Bridge IGBT Module PDS5764-1.1 April 2004 FEATURES I I I I KEY PARAMETERS VCES VCE(sat) * IC IC(PK) (typ) (max) (max) 3300V 2.8V 100A 200A Soft Punch Through Silicon 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates Hi
Dynex Semiconductor
Dynex Semiconductor		igbt
4DIM100WHS12-A000IGBT Power Module

DIM100WHS12-A000 DIM100WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5735-1.0 DS5735-2.0 May 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Baseplate KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max)
Dynex Semiconductor
Dynex Semiconductor		igbt
5DIM100WHS12-E000IGBT Power Module

DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 1.7V
Dynex Semiconductor
Dynex Semiconductor		igbt
6DIM100WHS17-A000IGBT Power Module

DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.1 Febuary 2004 FEATURES I I I 10µs Short Circuit Withstand Non Punch Through Silicon Isolated Copper Base Plate KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V 100A 200A *(measured a
Dynex Semiconductor
Dynex Semiconductor		igbt
7DIM100WHS17-E000IGBT Power Module

DIM100WHS17-E000 DIM100WHS17-E000 Half Bridge IGBT Module PDS5719-1.2 February 2004 FEATURES I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1700V 2.0
Dynex Semiconductor
Dynex Semiconductor		igbt



Esta página es del resultado de búsqueda del DIM100WHS17-A000. Si pulsa el resultado de búsqueda de DIM100WHS17-A000 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap