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Datasheet D2030 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | D2030 | METAL GATE RF SILICON FET TetraFET
D2030UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313 ± 0.2
4 3
3.00 2.07 0.381 2 PL. 2 PL.
5
1.27
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
0.360 ± 0.005
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Seme LAB |
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3 | D2030 | NPN Transistor - 2SD2030 To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i |
Renesas Technology |
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2 | D2030- | 14W Hi-Fi Audio Amplifier Silicore
14W Hi-Fi AUDIO AMPLIFIER
GENERAL DESCRIPTION
The D2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a lo w frequency class AB amplifier. Typically it provides 14W outpu t po wer (d = 0.5%) at 14V/4 Ω ;at ± 14V or 28V, the guaranteed output power is 12W on |
Shaoxing Silicore Technology |
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1 | D2030UK | METAL GATE RF SILICON FET TetraFET
D2030UK
METAL GATE RF SILICON FET
MECHANICAL DATA
Dimensions in mm.
5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL.
2.313 ± 0.2
4 3
3.00 2.07 0.381 2 PL. 2 PL.
5
1.27
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
0.360 ± 0.005
|
Seme LAB |
Esta página es del resultado de búsqueda del D2030. Si pulsa el resultado de búsqueda de D2030 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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Sanken |
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