Datasheet CJL818C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CJL818C	PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJL818C TRANSISTOR (PNP) DESCRIPTIONS The device is manufactured in low voltage PNP Planar Technology with "Base Island layout. The resulting transistor shows exceptional high gain performance coupled with	JCET

CJL8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CJL8205	Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205 Dual N-Channel MOSFET V(BR)DSS 19 V RDS(on)MAX 25mΩ@4.5V 32mΩ@2.5V ID 6A SOT-23-6L FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power	JCET
CJL8810	Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 Dual N-Channel MOSFET SOT-23-6L DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitab	JCET
CJL8820	Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8820 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 21mΩ@10V 24mΩ @4.5V 28 mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V ID 7A DESCRIPTION The CJL8820 uses advanced trench technology to p	JCET

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Número de pieza	Descripción	Fabricantes	PDF
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