Datasheet CJD04N65A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CJD04N65A	N-Channel Power MOSFET / Transistor CJD04N65A TO-251-3L Plastic-Encapsulate MOSFETS CJD04N65A N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. D	ZPSEMI

CJD04N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CJD04N60B	N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B V(BR)DSS 600V 600V N-Channel Power MOSFET RDS(on)MAX 3.0Ω@10V ID 4A TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high 1. GATE	JCET
CJD04N65A	N-Channel Power MOSFET / Transistor CJD04N65A TO-251-3L Plastic-Encapsulate MOSFETS CJD04N65A N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode f	ZPSEMI
CJD04N65	N-Channel Power MOSFET / Transistor CJD04N65 TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast	ZPSEMI

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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