Datasheet CJ1012-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CJ1012-G	MOSFET ( Transistor ) MOSFET CJ1012-G N-Channel RoHS Device Features - High-Side Switching. - Low On-Resistance. - Low Threshold. - Fast Switching Speed. - ESD protected up to 2KV. Mechanical data - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram G1 S2 3D G : Gate S	Comchip

CJ101 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CJ1012-G	MOSFET ( Transistor ) MOSFET CJ1012-G N-Channel RoHS Device Features - High-Side Switching. - Low On-Resistance. - Low Threshold. - Fast Switching Speed. - ESD protected up to 2KV. Mechanical data - Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram G	Comchip
CJ1012	N-Channel Power MOSFET / Transistor CJ1012 SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET General Description This Single N-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS(ON). FEATURE  High-Side Switching  Low On-Resistance  Low Threshold 	ZPSEMI
CJ1012	N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS CJ1012 N-Channel Power MOSFET V(BR)DSS 20 V RDS(on)MAX 700mΩ@4.5V 850mΩ@2.5V ID 500mA General Description This Single N-Channel MOSFET has been designed using advanced Power Tren	JCET

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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