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Datasheet CJ1012 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | CJ1012 | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
V(BR)DSS
20 V
RDS(on)MAX
700mΩ@4.5V
850mΩ@2.5V
ID
500mA
General Description This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimi |
 JCET |
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| 2 | CJ1012 | N-Channel Power MOSFET / Transistor CJ1012
SOT-523 Plastic-Encapsulate MOSFETS
CJ1012 N-Channel Power MOSFET
General Description This Single N-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON).
FEATURE High-Side Switching Low On-Resistance Low Threshold Fast Switching Speed |
 ZPSEMI |
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| 1 | CJ1012-G | MOSFET ( Transistor ) MOSFET
CJ1012-G
N-Channel RoHS Device
Features
- High-Side Switching. - Low On-Resistance. - Low Threshold. - Fast Switching Speed. - ESD protected up to 2KV.
Mechanical data
- Case: SOT-323, molded plastic. - Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
G1 S2
3D
G : Gate S |
 Comchip |
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