Datasheet CHA5012 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CHA5012	X Band Driver Amplifier CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride laye	United Monolithic Semiconductors

CHA5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CHA5014-99F	X Band HBT Driver Amplifier CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly	United Monolithic Semiconductors
CHA5350-99F	17-24GHz Medium Power Amplifier CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage monolithic MPA that typically provides an output power of 26.5dBm at 1dB gain compression associated to a high IP3 output of 34dBm. It is designed for a wide ran	United Monolithic Semiconductors
CHA5115-99F	X-band Medium Power Amplifier CHA5115-99F RoHS COMPLIANT X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added e	United Monolithic Semiconductors

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Número de pieza	Descripción	Fabricantes	PDF
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