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Datasheet CGHV27200 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGHV27200 | GaN HEMT
PRELIMINARY
CGHV27200
200 W, 2500-2700 MHz, GaN HEMT for LTE
Cree’s CGHV27200 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA |
Cree |
CGHV27 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGHV27030S | GaN HEMT |
CREE |
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CGHV27200 | GaN HEMT |
Cree |
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CGHV27015S | GaN HEMT |
Cree |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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