|
|
Datasheet CGHV14250 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGHV14250 | GaN HEMT CGHV14250
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
Cree’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band |
Cree |
CGHV14 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGHV14800 | GaN HEMT |
Cree |
|
CGHV14500 | GaN HEMT |
Cree |
|
CGHV14250 | GaN HEMT |
Cree |
Esta página es del resultado de búsqueda del CGHV14250. Si pulsa el resultado de búsqueda de CGHV14250 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |