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Datasheet CGH35240F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGH35240F | GaN HEMT CGH35240F
240 W, 3100-3500 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH35240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35240F ideal |
Cree |
CGH352 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGH35240F | GaN HEMT |
Cree |
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Número de pieza | Descripción | Fabricantes | |
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