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Datasheet CGH35060P1 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CGH35060P1   GaN HEMT

CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal
Cree
Cree
datasheet CGH35060P1 pdf

CGH3506 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CGH35060F1

GaN HEMT

CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes
Cree
Cree
datasheet pdf - Cree
CGH35060P1

GaN HEMT

CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes
Cree
Cree
datasheet pdf - Cree


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Número de pieza Descripción Fabricantes PDF
SPS122

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