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Datasheet CGH35030F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGH35030F | GaN HEMT PRELIMINARY
CGH35030F
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35030F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA |
Cree |
CGH350 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGH35030F | GaN HEMT |
Cree |
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CGH35060F1 | GaN HEMT |
Cree |
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CGH35015F | GaN HEMT |
Cree |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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