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Datasheet CGH35015 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CGH35015 | GaN HEMT CGH35015
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH |
 Cree |
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| 1 | CGH35015F | GaN HEMT PRELIMINARY
CGH35015F
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
Cree’s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which |
Cree |
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