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Datasheet CGH31240F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CGH31240F | GaN HEMT CGH31240F
240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal |
Cree |
CGH312 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CGH31240F | GaN HEMT |
Cree |
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Número de pieza | Descripción | Fabricantes | |
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