Datasheet CEU3301 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEU3301	P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS(ON) = 32mΩ RDS(ON) = 50mΩ @VGS = -10V. @VGS = -4.5V. CED3301/CEU3301 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 pac	CET

CEU3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEU3055L	N-Channel Enhancement Mode Field Effect Transistor	Chino-Excel Technology
CEU3172	N-Channel Enhancement Mode Field Effect Transistor CED3172/CEU3172 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-25	CET
CEU30P10	P-Channel Enhancement Mode Field Effect Transistor CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquire	CET

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Número de pieza	Descripción	Fabricantes	PDF
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