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Datasheet CEU20P06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEU20P06   P-Channel Enhancement Mode Field Effect Transistor

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 p
 CET
CET		 datasheet CEU20P06 pdf

CEU20 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEU20P10

P-Channel Enhancement Mode Field Effect Transistor

CED20P10/CEU20P10 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -100V, -16A, RDS(ON) = 130mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 &
 CET
CET		 datasheet pdf - CET
CEU20P06

P-Channel Enhancement Mode Field Effect Transistor

CED20P06/CEU20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -13A, RDS(ON) = 105mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquire
 CET
CET		 datasheet pdf - CET
CEU20N06

N-Channel Enhancement Mode Field Effect Transistor

CED20N06/CEU20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 20A, RDS(ON) = 55mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO
 CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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