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Datasheet CET6601 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CET6601 | P-Channel Enhancement Mode Field Effect Transistor CET6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package.
D
DS D
G
SOT-223
G
S
ABSOLUTE MA |
CET |
CET6 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CET6426 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CET6861 | P-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CET6601 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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