Datasheet CET4401B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CET4401B	P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D CET4401B D G SOT-223 D S G S ABSOLUTE M	Chino-Excel Technology

CET44 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CET4401B	P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D CET4401B D G SOT-223 D	Chino-Excel Technology
CET4435A	P-Channel Enhancement Mode Field Effect Transistor CET4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D D G SOT-223	Chino-Excel Technology

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