Datasheet CET0215 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CET0215	N-Channel Enhancement Mode Field Effect Transistor CET0215 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAX	CET

CET0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CET04N10	N-Channel Enhancement Mode Field Effect Transistor CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D G SOT-223 D S G	Chino-Excel Technology
CET0215	N-Channel Enhancement Mode Field Effect Transistor CET0215 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead-free plating ; RoHS compliant. SOT-223 package. D DS D G SOT-223	CET

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Número de pieza	Descripción	Fabricantes	PDF
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