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Datasheet CES2316 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CES2316 | N-Channel Enhancement Mode Field Effect Transistor CES2316
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. D
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D G SOT-23 S
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ABSOLUTE MAXIMUM RATIN |
Chino-Excel Technology |
CES2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CES2301 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CES2362 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CES2310 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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Número de pieza | Descripción | Fabricantes | |
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