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Datasheet CES2312 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CES2312 | N-Channel Enhancement Mode Field Effect Transistor CES2312
N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D
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D G SOT-23 S
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ABSOLUTE MAXIMUM RATI |
Chino-Excel Technology |
CES2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CES2301 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CES2362 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CES2310 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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Número de pieza | Descripción | Fabricantes | |
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