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Datasheet CEP30P03 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEP30P03   P-Channel Enhancement Mode Field Effect Transistor

CEP30P03/CEB30P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -30A, RDS(ON) =32mΩ @VGS = -10V. RDS(ON) =50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 pac
 CET
CET		 datasheet CEP30P03 pdf

CEP30 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEP30N3

N-Channel Enhancement Mode Field Effect Transistor

CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ ID 30A 30A 30A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). Hig
 CET
CET		 datasheet pdf - CET
CEP30N15L

N-Channel Enhancement Mode Field Effect Transistor

CEP30N15L/CEB30N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. T
 CET
CET		 datasheet pdf - CET
CEP3060

N-Channel Enhancement Mode Field Effect Transistor

CEP3060/CEB3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 105A,RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 8mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-22
 CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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