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Datasheet CEP21A2 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEP21A2   N-Channel Enhancement Mode Field Effect Transistor

CEP21A2/CEB21A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 25A,RDS(ON) = 40mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CET
CET
datasheet CEP21A2 pdf

CEP2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEP20N06

N-Channel Enhancement Mode Field Effect Transistor

CEP20N06/CEB20N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 25A, RDS(ON) =55mΩ @VGS = 10V. RDS(ON) =75mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-22
CET
CET
datasheet pdf - CET
CEP20P06

P-Channel Enhancement Mode Field Effect Transistor

CEP20P06/CEB20P06 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. RDS(ON) =150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
CET
CET
datasheet pdf - CET
CEP21A3

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CEP21A3/CEB21A3 Nov. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 20A , RDS(ON)=45mΩ @VGS=10V. RDS(ON)=70mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263
CET
CET
datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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