|
|
Datasheet CEP16N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CEP16N10 | N-Channel Enhancement Mode Field Effect Transistor CEP16N10/CEB16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 15.2A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO |
 CET |
 |
| 1 | CEP16N10L | N-Channel Enhancement Mode Field Effect Transistor CEP16N10L/CEB16N10L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO- |
CET |
|
| Esta página es del resultado de búsqueda del CEP16N10. Si pulsa el resultado de búsqueda de CEP16N10 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |