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Datasheet CEM7808 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEM7808   Enhancement Mode Field Effect Transistor

CEM7808 Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) PRELIMINARY FEATURES 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). Hig
 CET
CET		 datasheet CEM7808 pdf

CEM7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEM7350

Dual Enhancement Mode Field Effect Transistor

CEM7350 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 100V, 2.6A, RDS(ON) = 190mΩ @VGS = 10V. -100V, -2.0A, RDS(ON) = 320mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D1 D1 7 D2 6
 CET
CET		 datasheet pdf - CET
CEM7808

Enhancement Mode Field Effect Transistor

CEM7808 Enhancement Mode Field Effect Transistor (2 X N and 2 X P Channel) PRELIMINARY FEATURES 30V, 6.2A, RDS(ON) = 33mΩ @VGS = 10V. RDS(ON) = 60mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. Super high dense cell design for extrem
 CET
CET		 datasheet pdf - CET
CEM7101

Dual N-Channel Enhancement Mode Field Effect Transistor

CEM7101 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4A, RDS(ON) = 75mΩ 5 @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surf
 CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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