|
|
Datasheet CEM4600 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEM4600 | Dual Enhancement Mode Field Effect Transistor CEM4600
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS |
Chino-Excel Technology |
CEM4 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEM4953 | Dual P-Channel Enhancement Mode MOSFET |
Chino-Excel Technology |
|
CEM4410B | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
|
CEM4410 | N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
Esta página es del resultado de búsqueda del CEM4600. Si pulsa el resultado de búsqueda de CEM4600 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |