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Datasheet CEK01N6G Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEK01N6G   N-Channel Enhancement Mode Field Effect Transistor

www.DataSheet.co.kr N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N6G D G G D G S D TO-92(Amm
 CET
CET		 datasheet CEK01N6G pdf

CEK01 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEK01N7

N-Channel Enhancement Mode Field Effect Transistor

CEK01N7 N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 0.3A, RDS(ON) = 18 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. D GD S TO-92(Ammopack) GD
CET
CET		 datasheet pdf - CET
CEK01N65A

N-Channel Enhancement Mode Field Effect Transistor

Datasheet.es N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 0.3A, RDS(ON) = 15 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N65A D G
CET
CET		 datasheet pdf - CET
CEK01N6G

N-Channel Enhancement Mode Field Effect Transistor

Datasheet.es N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1A, RDS(ON) = 9.3 Ω @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TO-92(Bulk) & TO-92(Ammopack) package. CEK01N6G D G G
CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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