Datasheet CEH8205 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEH8205	N-Channel Enhancement Mode Field Effect Transistor CEH8205 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) TYP = 25 mΩ @VGS = 4.5V. RDS(ON) TYP = 30mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. Halogen free. 4 5 6 3 2 1	CET

CEH8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEH8205	N-Channel Enhancement Mode Field Effect Transistor CEH8205 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 5.2A , RDS(ON) TYP = 25 mΩ @VGS = 4.5V. RDS(ON) TYP = 30mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. Halogen	CET

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Número de pieza	Descripción	Fabricantes	PDF
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