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Datasheet CEH2608 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEH2608 | Dual Enhancement Mode Field Effect Transistor CEH2608
Dual Enhancement Mode Field Effect Transistor (N Channel)
PRELIMINARY
FEATURES
20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead- |
CET |
CEH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEH2608 | Dual Enhancement Mode Field Effect Transistor |
CET |
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CEH2331 | P-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEH2321 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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