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Datasheet CEH2316 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEH2316 | N-Channel Enhancement Mode Field Effect Transistor CEH2316
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 6A , RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5,6,)
ABS |
CET |
CEH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEH2608 | Dual Enhancement Mode Field Effect Transistor |
CET |
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CEH2331 | P-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEH2321 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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