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Datasheet CEH2311 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEH2311 | P-Channel Enhancement Mode Field Effect Transistor CEH2311
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V.
RDS(ON) = 130mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 4 5 6 3 2 1 TSOP-6 S(4) G(3) D(1,2,5, |
CET |
CEH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEH2608 | Dual Enhancement Mode Field Effect Transistor |
CET |
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CEH2331 | P-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEH2321 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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