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Datasheet CEH2305 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEH2305 | P-Channel Enhancement Mode Field Effect Transistor CEH2305
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -4.9A , RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 65mΩ @VGS = -4.5V. RDS(ON) = 119mΩ @VGS = -2.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
TSOP |
CET |
CEH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEH2608 | Dual Enhancement Mode Field Effect Transistor |
CET |
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CEH2331 | P-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEH2321 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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