Datasheet CEG9926 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEG9926	Dual N-Channel Enhancement Mode Field Effect Transistor CEG9926 Nov. 2002 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. G2 S2 S2 D2 D1	Chino-Excel Technology

CEG9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEG9926	Dual N-Channel Enhancement Mode Field Effect Transistor CEG9926 Nov. 2002 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Packa	Chino-Excel Technology

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Número de pieza	Descripción	Fabricantes	PDF
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