Datasheet CEF30N3 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEF30N3	N-Channel Enhancement Mode Field Effect Transistor CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ ID 30A 30A 30A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current	CET

CEF3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEF30N3	N-Channel Enhancement Mode Field Effect Transistor CEP30N3/CEB30N3 CEF30N3 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP30N3 CEB30N3 CEF30N3 VDSS 300V 300V 300V RDS(ON) 110mΩ 110mΩ 110mΩ ID 30A 30A 30A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). Hig	CET
CEF35P10	P-Channel Enhancement Mode Field Effect Transistor CEP35P10/CEB35P10 CEF35P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -32A, RDS(ON) =76mΩ @VGS = -10V. RDS(ON) =92mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ;	CET

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Número de pieza	Descripción	Fabricantes	PDF
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