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Datasheet CEF09N6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CEF09N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEF09N6
Jul. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 6A ,RDS(ON)= 1.2 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole.
D
6
G
G D S
TO-220F
S
ABSOLUTE |
 Chino-Excel Technology |
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| 1 | CEF09N6 | N-Channel Enhancement Mode Field Effect Transistor CEP09N6/CEB09N6 CEI09N6/CEF09N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power an |
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