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Datasheet CEF05N6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CEF05N6 | N-Channel Enhancement Mode Field Effect Transistor CEF05N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 5A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220F full-pak for through hole.
D
G
D S CEF |
 CET |
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| 1 | CEF05N65 | N-Channel Enhancement Mode Field Effect Transistor CEP05N65/CEB05N65 CEF05N65
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP05N65 CEB05N65 CEF05N65
VDSS 650V 650V
650V
RDS(ON) 2.4Ω 2.4Ω
2.4Ω
ID 4.5A 4.5A 4.5A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and current handing c |
CET |
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