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Datasheet CEF04N6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CEF04N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEF04N6
Feb. 2003
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
6
600V , 2.5A , RDS(ON)=2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole
D
G
G D S
S
TO-220F
ABSOLUTE |
 Chino-Excel Technology |
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| 1 | CEF04N65 | N-Channel Enhancement Mode Field Effect Transistor CEP04N65/CEB04N65
CEF04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP04N65 CEB04N65 CEF04N65
VDSS 650V
RDS(ON) 2.8Ω
ID 4A
@VGS 10V
650V 2.8Ω
4A
10V
650V 2.8Ω 4A d 10V
Super high dense cell design for extremely low RDS(ON). High power and curr |
 CET |
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