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CEF02N9 Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 CEF02N9   N-Channel Enhancement Mode Field Effect Transistor

CEP02N9/CEB02N9 CEF02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N9 CEB02N9 CEF02N9 VDSS 900V 900V 900V RDS(ON) 6.8Ω 6.8Ω 6.8Ω ID 2.6A 2.6A 2.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current
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CET
datasheet CEF02N9 pdf

CEF0 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEF02N6

N-Channel Logic Level Enhancement Mode Field Effect Transistor

CEF02N6 Sep. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D 6 G G D S S
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CET
datasheet CEF02N6 pdf
CEF02N6A

N-Channel Enhancement Mode Field Effect Transistor

CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for e
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datasheet CEF02N6A pdf
CEF02N65A

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V CEP02N65A/CEB02N65A CEF02N65A PRELIMINARY Super high dense cell design for extremely low RDS(O
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datasheet CEF02N65A pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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