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CEE02N6G Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 CEE02N6G   N-Channel Enhancement Mode Field Effect Transistor

CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES TO-126 S ABSOLUTE
CET
CET
datasheet CEE02N6G pdf

CEE02 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEE02N6A

N-Channel Enhancement Mode Field Effect Transistor

CEE02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G D S CEE SER
CET
CET
datasheet CEE02N6A pdf
CEE02N6G

N-Channel Enhancement Mode Field Effect Transistor

CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES
CET
CET
datasheet CEE02N6G pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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