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CED41A2 Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
1 CED41A2   N-Channel Enhancement Mode Field Effect Transistor

CED41A2/CEU41A2 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 36A, RDS(ON) = 20mΩ @VGS = 4.5V. RDS(ON) = 30mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
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datasheet CED41A2 pdf

CED4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CED4531

P-Channel Enhancement Mode Field Effect Transistor

CED4531/CEU4531 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -25A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. T
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datasheet CED4531 pdf
CED4060AL

N-Channel Enhancement Mode Field Effect Transistor

CED4060AL/CEU4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-
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datasheet CED4060AL pdf
CED4311

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS(ON) = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 p
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datasheet CED4311 pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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