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Datasheet CED16N10 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | CED16N10 | N-Channel Enhancement Mode Field Effect Transistor CED16N10/CEU16N10
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
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1 | CED16N10L | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G
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CED16N |
Chino-Excel Technology |
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Número de pieza | Descripción | Fabricantes | |
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