Datasheet CED10P10 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CED10P10	P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO	Chino-Excel Technology

CED10 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CED10P10	P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D	Chino-Excel Technology
CED1012L	N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012L/CEU1012L D D	CET
CED1012	N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012/CEU1012 D D G	CET

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Número de pieza	Descripción	Fabricantes	PDF
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