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Datasheet CED02N7G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CED02N7G | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
700V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED02N7G/CEU02N7G
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 Chino-Excel Technology |
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| 1 | CED02N7G-1 | N-Channel Enhancement Mode Field Effect Transistor CED02N7G-1/CEU02N7G-1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
720V, 1.6A, RDS(ON) = 6.75Ω @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
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