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Datasheet CED02N6 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | CED02N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CED02N6/CEU02N6
Dec. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package.
D
6
G
D G S
G D S
CEU SERIES TO-25 |
CET |
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3 | CED02N65A | N-Channel Enhancement Mode Field Effect Transistor CED02N65A/CEU02N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G |
CET |
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2 | CED02N6A | N-Channel Enhancement Mode Field Effect Transistor CED02N6A/CEU02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D
D G S CEU SERIES TO-252( |
CET |
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1 | CED02N6G | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
CED02N6G/CEU02N6G
D
D G S CEU SERIES TO-252(D |
Chino-Excel Technology |
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Número de pieza | Descripción | Fabricantes | |
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