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Datasheet CED02N6 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
4 CED02N6   N-Channel Logic Level Enhancement Mode Field Effect Transistor

CED02N6/CEU02N6 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 600V , 1.9A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D 6 G D G S G D S CEU SERIES TO-25
CET
CET
datasheet CED02N6 pdf
3 CED02N65A   N-Channel Enhancement Mode Field Effect Transistor

CED02N65A/CEU02N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G
CET
CET
datasheet CED02N65A pdf
2 CED02N6A   N-Channel Enhancement Mode Field Effect Transistor

CED02N6A/CEU02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.3A, RDS(ON) = 8 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(
CET
CET
datasheet CED02N6A pdf
1 CED02N6G   N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS(ON) = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED02N6G/CEU02N6G D D G S CEU SERIES TO-252(D
Chino-Excel Technology
Chino-Excel Technology
datasheet CED02N6G pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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