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Datasheet CEB6601 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEB6601 | P-Channel Enhancement Mode Field Effect Transistor CEP6601/CEB6601 CEF6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
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CET |
CEB6 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEB6030L | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEB603AL | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEB65A3 | N-Channel Enhancement Mode Field Effect Transistor |
CET |
Esta página es del resultado de búsqueda del CEB6601. Si pulsa el resultado de búsqueda de CEB6601 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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