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Datasheet CEB5175 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEB5175 | P-Channel Enhancement Mode Field Effect Transistor CEP5175/CEB5175
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO |
CET |
CEB5 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEB50P03 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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CEB51A3 | N-Channel Enhancement Mode Field Effect Transistor |
CET |
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CEB5175 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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