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Datasheet CEB5175 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEB5175   P-Channel Enhancement Mode Field Effect Transistor

CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO
CET
CET
datasheet CEB5175 pdf

CEB5 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEB50P03

P-Channel Enhancement Mode Field Effect Transistor

CEP50P03/CEB50P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -47A, RDS(ON) =20mΩ @VGS = -10V. RDS(ON) =32mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. T
CET
CET
datasheet pdf - CET
CEB51A3

N-Channel Enhancement Mode Field Effect Transistor

CEP51A3/CEB51A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 48A, RDS(ON) =16.5mΩ @VGS = 10V. RDS(ON) =28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-22
CET
CET
datasheet pdf - CET
CEB5175

P-Channel Enhancement Mode Field Effect Transistor

CEP5175/CEB5175 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -55V, -50A, RDS(ON) = 23mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating
CET
CET
datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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